首頁(yè) >MMBT3906(2A)>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PNPGENERALPURPOSESWITCHINGTRANSISTOR FEATURES ?PNPepitaxialsilicon,planardesign ?Collector-emittervoltageVCE=-40V ?CollectorcurrentIC=-200mA ?Acqirequalitysystemcertificate:TS16949 ?AEC-Q101qualified ?LeadfreeincomplywithEURoHS2002/95/ECdirectives. ?GreenmoldingcompoundasperIEC61249Std.. | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
40VMatchedPairPNPSmallSignalTransistors | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
PNPPlasticEncapsulatedTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TRANSISTOR(PNP) FEATURES ●WedeclarethatthematerialofproductcompliancewithRoHS requirementsandHalogenFree. ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
DUALTRANSISTOR | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | ||
PNPSiliconEpitaxialPlanarTransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
S0OT-363Plastic-EncapsulateTransistors FEATURES *Epitaxialplanardieconstruction *?ldealforlowpoweramplificationandswitching | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
TRANSISTOR DESCRIPTION PNPEpitaxialplanarSiliconTransistor FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904E) Ultra-SmallSurfaceMountPackage AlsoAvailableinLeadFreeVersion APPLICATION GeneralPurposeAmplifier,switching Forportablee | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
Smallsignalapplication Descriptions ?Smallsignalapplication ?Switchingapplication Features ?Lowcollectorsaturationvoltage ?Lowcollectoroutputcapacitance ?ComplementarypairwithMMBT3904EF | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
40VPNPSMALLSIGNALTRANSISTORINDFN0806 Features ?BVCEO>-40V ?IC=-200mAhighCollectorCurrent ?PD=435mWPowerDissipation ?0.48mm2packagefootprint,16timessmallerthanSOT23 ?0.4mmheightpackageminimizingoff-boardprofile ?ComplementaryNPNTypeMMBT3904FA ?TotallyLead-Free&FullyRoHScompliant(Notes | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES |
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