MMRF1312GS

RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V

These RF power devices, MMRF1312H, MMRF1312HS and MMRF1312GS, are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L; ? Internally input and output matched for broadband operation and ease of use\n? Device can be used in a single-ended, push-pull, or quadrature configuration\n? Qualified up to a maximum of 52 VDD operation\n? High ruggedness, handles > 20:1 VSWR\n? Integrated ESD protection with greater negative vo;

恩XP

MMRF1312GS

RF Power LDMOS Transistors

恩XP

1312

Precisetemperaturecontrol

1312

Precisetemperaturecontrol

1312

Window“ViewPort”Plugs

MTD1312

N??hannelDPAKPowerMOSFET