MRFE6VP5600H

1.8-600 MHz，600 W連續(xù)波，50 V寬帶射頻功率LDMOS

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency ran; ? Unmatched Input and Output Allowing Wide Frequency Range Utilization\n? Device can be used Single-Ended or in a Push-Pull Configuration\n? Qualified Up to a Maximum of 50 VDD Operation\n? Characterized from 30 V to 50 V for Extended Power Range\n? Suitable for Linear Application with Appropriate B;

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MRFE6VP5600H

RF Power Field Effect Transistors

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MRFE6VP5600HS

Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency ran; ? Unmatched Input and Output Allowing Wide Frequency Range Utilization\n? Device can be used Single-Ended or in a Push-Pull Configuration\n? Qualified Up to a Maximum of 50 VDD Operation\n? Characterized from 30 V to 50 V for Extended Power Range\n? Suitable for Linear Application with Appropriate B;

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MRFE6VP5600HR6

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

MRFE6VP5600HR6

RF Power Field Effect Transistors

MRFE6VP5600HR6

RF Power Field Effect Transistors

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MRFE6VP5600HR6_11

RF Power Field Effect Transistors

MRFE6VP5600HSR6

RF Power Field Effect Transistors

MRFE6VP5600HSR6

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

MRFE6VP5600HSR6

RF Power Field Effect Transistors

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