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IXFH14N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFH14N100

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFH14N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR14N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFT14N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFX14N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFX14N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX14N100

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXTH14N100

IscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.82Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH14N100

MegaMOSTMFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols ?Uninterrupti

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    MSAFX14N100A

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    TRANS MOSFET N-CH 14A 3PIN COOLPACK1 - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MSEMHR
2447
SMD
100500
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 詢價(jià)
-
23+
NA
10000
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ITT
ROHS
13352
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
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Panasonic
2010+
N/A
66
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PANASONIC
20+
傳感器
396
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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PANASONIC
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
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Panasonic
新
5
全新原裝 貨期兩周
 詢價(jià)
Panasonic
2022+
1
全新原裝 貨期兩周
 詢價(jià)
ST/意法
18+
1000
進(jìn)口原裝現(xiàn)貨假一賠萬(wàn)力挺實(shí)單
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ST
24+
30P
200000
原裝進(jìn)口正口,支持樣品
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更多MSAFX14N100A供應(yīng)商 更新時(shí)間2025-5-1 15:00:00

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