首頁 >MST5330BTS>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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35V,1.6μAUltraLowQuiescentCurrent,200mA,LowDropoutVoltageRegulator Description TheMST53XXBseriesisahighvoltage， ultralow-power，lowdropoutvoltageregulator.The devicecandeliver100mAoutputcurrentwitha dropoutvoltageof300mVandallowsaninput voltageashighas35V.Thetypicalquiescentcurrent isonly1.6μA.Thedeviceisavailableinfi | MILESTONEWUXI MILESTONE SEMICONDUCTOR INC. 力芯微無錫力芯微電子股份有限公司 | MILESTONE | ||
TRANSISTORCOUPLER GaAsinfraredEMITTINGDIODE&NPNSILICONPHOTOTRANSISTOR TheMT5350consistsofagalliumarsenideinfraredemittingdiodecoupledwithasiliconphototransistorinadualin-linepackage APPLICATIONS ?ACLINE/DIGITALLOGICISOLATOR ?DIGITALLOGIC/DIGITALLOGICISOLATOR ?TELEPHONE | Marktech Marktech Corporate | Marktech | ||
DualBiasResistorTransistorNPNPNPSilicon DualBiasResistorTransistor NPN+PNPSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
DualBiasResistorTransistors | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | ||
DUALBIASRESISTORTRANSISTORNPN&PNPWITHMONOLITHICBIASRESISTORNETWORK DESCRIPTION TheBRT(BiasResistorTransistor)containsasingle transistorwithamonolithicbiasnetworkconsisting oftworesistors;aseriesbaseresistoranda baseemitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternal resistorbiasnetwor | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
1310nmInGaAsPMQW-FPLASERDIODEFOROTDRAPPLICATIONS | CEL California Eastern Labs | CEL | ||
1310nmInGaAsPMQW-FPLASERDIODEFOROTDRAPPLICATIONS | CEL California Eastern Labs | CEL | ||
30V,3APNPlowVCEsat(BISS)transistor 1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. NPNcomplement:PBSS4330PA. 2.Featuresandbenefits ?Lowcollector-emitter | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
30V,3APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. NPNcomplement:PBSS4330PAS Featu | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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