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MT4C4001JCN-12SLASHIT中文資料AUSTIN數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MT4C4001JCN-12SLASHIT
廠商型號(hào)

MT4C4001JCN-12SLASHIT

功能描述

1 MEG x 4 DRAM Fast Page Mode DRAM

文件大小

251.25 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 Austin Semiconductor
企業(yè)簡(jiǎn)稱

AUSTIN

中文名稱

Austin Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-28 16:35:00

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MT4C4001JCN-12SLASHIT規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the first 10 bits and CAS the later 10 bits. A READ or WRITE cycle is selected with the WE input. A logic HIGH on WEdictates READ mode while a logic LOW on WE dictates WRITE mode. During a WRITE cycle, data-in (D) is latched by the falling edge of WE or CAS, whichever occurs last.

FEATURES

? Industry standard x4 pinout, timing, functions, and packages

? High-performance, CMOS silicon-gate process

? Single +5V±10% power supply

? Low-power, 2.5mW standby; 300mW active, typical

? All inputs, outputs, and clocks are fully TTL and CMOS compatible

? 1,024-cycle refresh distributed across 16ms

? Refresh modes: RAS-ONLY, CAS-BEFORE-RAS(CBR), and HIDDEN

? FAST PAGE MODE access cycle

? CBR with WE a HIGH (JEDEC test mode capable via WCBR)

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