首頁 >MT4LC4M16R6TG-5:D>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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DRAM GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
DRAM | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
DRAM GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
DRAM | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron |
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