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N04L163WC1A

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB1

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB1-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT2

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT2-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1C

4MbUltra-LowPowerAsynchronousCMOSSRAM

Features ?SingleWidePowerSupplyRange 2.2to3.6Volts ?Verylowstandbycurrent 2.0μAat3.0V(Typical) ?Verylowoperatingcurrent 1.5mAat3.0Vand1μs(Typical)

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詳細(xì)參數(shù)

  • 型號(hào):

    N04L163WC1A

  • 制造商:

    NANOAMP

  • 制造商全稱:

    NANOAMP

  • 功能描述:

    4Mb Ultra-Low Power Asynchronous CMOS SRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SOLUTIONS
24+
TSOP
5000
只做原裝公司現(xiàn)貨
詢價(jià)
SOLUTIO
23+
TSOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
AM
6000
面議
19
DIP/SMD
詢價(jià)
SOLUTIONS
23+
TSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
SOLUTIONS
21+
TSOP
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
AMISNANOAMPSOLUTIO
21+
TSOP44
13880
公司只售原裝,支持實(shí)單
詢價(jià)
SOLUTIONS
22+
TSOP
3000
原裝正品,支持實(shí)單
詢價(jià)
SOLUTIONS
23+
TSOP
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價(jià)
SOLUTIONS
24+
NA/
5950
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
ON SEMICONDUCTOR
2023+
SMD
20557
安羅世紀(jì)電子只做原裝正品貨
詢價(jià)
更多N04L163WC1A供應(yīng)商 更新時(shí)間2025-5-15 10:19:00