NCD57081BDR2G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NCx57080y, NCx57081y are high?current single channel

IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic

isolation, designed for high system efficiency and reliability in high

power applications. The devices accept complementary inputs and

depending on the pin configuration, offer options such as Active

Miller Clamp (version A), negative power supply (version B) and

separate high and low (OUTH and OUTL) driver outputs (version C)

for system design convenience. The driver accommodate wide range

of input bias voltage and signal levels from 3.3 V to 20 V and they

are available in narrow?body SOIC?8 package.

Features

? High Peak Output Current (+6.5 A/?6.5 A)

? Low Clamp Voltage Drop Eliminates the Need of Negative Power

Supply to Prevent Spurious Gate Turn?on (Version A)

? Short Propagation Delays with Accurate Matching

? IGBT/MOSFET Gate Clamping during Short Circuit

? IGBT/MOSFET Gate Active Pull Down

? Tight UVLO Thresholds for Bias Flexibility

? Wide Bias Voltage Range including Negative VEE2 (Version B)

? 3.3 V, 5 V, and 15 V Logic Input

? 3.75 kVRMS VISO (I?O) (to meet UL1577 Requirements)

? Safety and Regulatory Approvals:

? UL1577 Certified, 3750 VACRMS for 1 Minute

? DIN VDE V 0884?11 Certification Pending, 870 VPK Working Insulation Voltage

? High Transient Immunity

? High Electromagnetic Immunity

? NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q100

Qualified and PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

Typical Applications

? Motor Control

? Uninterruptible Power Supplies (UPS)

? Automotive Applications

? Industrial Power Supplies

? Solar Inverters

? HVAC