NCE2321

12-150V P-Channel Trench MOSFET; \n? V DS = -20V,I D = -3.9A\nR DS(ON) <70m? @ V GS =-2.5V\nR DS(ON) < 50m? @ V GS =-4.5V\n? High power and current handing capability\n? Lead free product is acquired\n? Surface mount package\n;

\n The NCE2321 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.\n

NCE2321

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

NCE2321

NCE P-Channel Enhancement Mode Power MOSFET

NCE2321A

12-150V P-Channel Trench MOSFET;

\n The NCE2321A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

NCE2321A

NCE P-Channel Enhancement Mode Power MOSFET

NTE2321

SiliconNPNTransistorQuad,GeneralPurpose

SiliconNPNTransistorQuad,GeneralPurpose

PAM2321

3MHz,FastTransient2AStep-DownConverter

PAM2321

FASTTRANSIENT2ASTEP-DOWNCONVERTER

PAM2321AYMADJ

FASTTRANSIENT2ASTEP-DOWNCONVERTER

PB-CMM2321-AK

2.4to2.5GHz1WattPowerAmplifier

GeneralDescription TheCMM2321isapoweramplifierintendedforusein2.4GHzISMbandapplicationssuchaswirelessdatacomequipment,wirelessbarcodescannersandinter-buildingcampusnetworks.Thisflexibleamplifiercanbebiasedtosupporttherequirementsoffrequencyhoppingordirec