NTH4L080N120SC1_V01中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

? 1200 V @ TJ = 175°C

? Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

? High Speed Switching with Low Capacitance

? 100 Avalanche Tested

? This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb?Free 2LI (on second level interconnection)

Applications

? Industrial Motor Drive

? UPS

? Boost Inverter

? PV Charger