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STP55NF

Marking：P55NF06；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecificallydesignedto minimizeinputcapacitanceandgatecharge.This rendersthedevicessuitableforuseasprimary switchinadvancedhigh-efficiencyisolatedDCDCconverter

STMICROELECTRONICSSTMicroelectronics

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STP55NF06

Marking：P55NF06FP；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecificallydesignedto minimizeinputcapacitanceandgatecharge.This rendersthedevicessuitableforuseasprimary switchinadvancedhigh-efficiencyisolatedDCDCconverter

STMICROELECTRONICSSTMicroelectronics

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STP5NK50Z

Marking：P5NK50Z；Package：TO-220；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STMICROELECTRONICSSTMicroelectronics

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STP5NK50Z

Marking：P5NK50Z；Package：TO-220；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP5NK50Z

Marking：P5NK50Z；Package：TO-220；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH? Power MOSFETs in I2PAK, DPAK, TO?220, TO?220FP and IPAK packages

Features ?100avalanchetested ?Gatechargeminimized ?Verylowintrinsiccapacitance ?Zener-protected Applications ?Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelect

STMICROELECTRONICSSTMicroelectronics

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STP5NK50ZFP

Marking：P5NK50ZFP；Package：TO-220FP；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP5NK50ZFP

Marking：P5NK50ZFP；Package：TO-220FP；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP5NK50ZFP

Marking：P5NK50ZFP；Package：TO-220FP；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH? Power MOSFETs in I2PAK, DPAK, TO?220, TO?220FP and IPAK packages

Features ?100avalanchetested ?Gatechargeminimized ?Verylowintrinsiccapacitance ?Zener-protected Applications ?Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelect

STMICROELECTRONICSSTMicroelectronics

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TLC555CPS

Marking：P555；Package：SO；TLC555 LinCMOS? Timer

1Features 1?Verylowpowerconsumption: –1-mWtypicalatVDD=5V ?Capableofoperationinastablemode ?CMOSoutputcapableofswingingrailtorail ?Highoutputcurrentcapability –Sink:100-mAtypical –Source:10-mAtypical ?OutputfullycompatiblewithCMOS,TTL,and MOS ?

TI1Texas Instruments

德州儀器美國德州儀器公司

TLC555CPSR

Marking：P555；Package：SO；TLC555 LinCMOS? Timer

1Features 1?Verylowpowerconsumption: –1-mWtypicalatVDD=5V ?Capableofoperationinastablemode ?CMOSoutputcapableofswingingrailtorail ?Highoutputcurrentcapability –Sink:100-mAtypical –Source:10-mAtypical ?OutputfullycompatiblewithCMOS,TTL,and MOS ?

TI1Texas Instruments

德州儀器美國德州儀器公司

詳細(xì)參數(shù)

  • 型號：

    P5

  • 制造商：

    JST Manufacturing

  • 功能描述：

    X[u 5.4mm 2.63 to 6.64mm2 5.4~8.5mm Bulk

  • 功能描述：

    0

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恩XP
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SOT343
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Apex
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MEISEI
422
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XX
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500
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MPS/美國芯源
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2447
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315000
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23+
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22820
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FM/富滿電子
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IC
30098
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更多P5供應(yīng)商 更新時(shí)間2025-6-30 16:44:00

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