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P6SMB8.2C

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

P6SMB8.2C

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨啟半導體上海晨啟半導體有限公司

P6SMB8.2C

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

P6SMB8.2C

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

PANJITPan Jit International Inc.

強茂強茂股份有限公司

P6SMB8.2CA

600WSurfaceMountTransientVoltageSuppressors

600WSurfaceMountTransientVoltageSuppressors Feature: *600WattPeakPowerDissipation *GlassPassivatedDieConstruction *ExcellentClampingCapabilityFastResponseTime *PlasticMaterialHasULFlammabilityClassificationRating94V-O MechanicalData *Case:

WEITRON

Weitron Technology

P6SMB8.2CA

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

P6SMB8.2CA

BI-DIRECTIONALGLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR600WATTS,6.8THRU200VOLTS

DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI

CentralCentral Semiconductor Corp

美國中央半導體

P6SMB8.2CA

TransientVoltageSuppressors(TVS)DataSheet

eatures Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01%

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

P6SMB8.2CA

600WSURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.8V–513VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

P6SMB8.2CA

6.8To600V600WSurfaceMountTransientVoltageSuppressors(TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove10V 600WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

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