PBSS5350D分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個(gè)規(guī)格書PDF中文資料

General description

150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Features and benefits

■ Excellent ruggedness

■ High efficiency

■ Low Rth providing excellent thermal stability

■ Designed for broadband operation (2500 MHz to 2700 MHz)

■ Lower output capacitance for improved performance in Doherty applications

■ Designed for low memory effects providing excellent pre-distortability

■ Internally matched for ease of use

■ Integrated ESD protection

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to

2700 MHz frequency range