PDTD114ET

NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistorinaSOT23plasticpackage. PNPcomplement:PDTB114ET. FEATURES ?Built-inbiasresistorsR1andR2(typ.10k?each) ?Simplificationofcircuitdesign ?Reducesnumberofcomponentsandboardspace. APPLICATIONS ?Especiallysuitableforspace

PHI

PDTD114ET

絲印：10；Package：TO-236AB；500 mA, 50 V NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■Built-inbiasresistors ■Simplifiescircuitdesign ■Reducescomponentcount ■±10resistorratiotole

PDTD114ET

500 mA, 50 V PNP resistor-equipped transistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications ?upto175°C

PDTD114ET

500 mA, 50 V NPN resistor-equipped transistors; ? 500 mA output current capability\n? Built-in bias resistors\n? Simplifies circuit design\n? Reduces component count\n? ± 10 % resistor ratio tolerance\n? AEC-Q101 qualified\n? High temperature applications up to 175 °C\n;

NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n

PDTD114ETR

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 0.425W

Nexperia USA Inc.

PDTD114ETVL

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 0.425W

Nexperia USA Inc.