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PHD23NQ10T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD23NQ10T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP23NQ10T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP23NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHX23NQ10T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHX23NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticfullpackenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching Applications:- ?d.c.tod.c.converters ?switchedmodepowersupplies ?T.V.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號:

    PHD23NQ10T

  • 功能描述:

    MOSFET TRENCH-100

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
PHI
24+
TO-252
20000
只做原廠渠道 可追溯貨源
詢價
PH
24+
SOT428TO-252
8866
詢價
恩XP
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
恩XP
23+
NA
2986
專做原裝正品,假一罰百!
詢價
ST/意法
23+
TO-223
69820
終端可以免費供樣,支持BOM配單!
詢價
PHI
1709+
TO-252/D-
32500
普通
詢價
恩XP
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
詢價
PHI
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
PHI
23+
TO-252D-PAK
125800
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
N
23+
TO-252
6000
原裝正品,支持實單
詢價
更多PHD23NQ10T供應(yīng)商 更新時間2025-6-22 16:36:00