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HZM6.8NB1

SiliconEpitaxialPlanarZenerDiodeforStabilizer

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8NB1

SiliconEpitaxialPlanarZenerDiodeforStabilizer

Features ?Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. ?MPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZS6.8NB1

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PZM6.8NB1

Voltageregulatordiodes

DESCRIPTION LowpowergeneralpurposevoltageregulatordiodeinaSOT346(SC59)plasticpackage,suitableforsurface mounteddesign. FEATURES ?Totalpowerdissipation:max.300mW ?Smallplasticpackagesuitableforsurfacemounteddesign ?Wideworkingvoltagerange:nom.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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