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RD8.2M

ZENERDIODES200mW3-PINMINIMOLD

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2MW

ZENERDIODES200mW3-PINMINIMOLD

TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2P

1WPOWERMINIMOLDZENERDIODE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2P

1WPOWERMINIMOLDZENERDIODE

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實(shí)業(yè)有限公司

RD8.2S

ZENERDIODES200mW2PINSSUPERMINIMOLD

DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES ?SharpBreakdowncharacteristic. ?Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2SL

ZENERDIODES

DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES ?LowNoise

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2UJ

LOWNOISESHARPBREAKDOWNCHARACTERISTICSZENERDIODES2PINULTRASUPERMINIMOLD

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2UM

ZENERDIODES2PINULTRASUPERMINIMOLD

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RKZ8.2AKU

SiliconPlanarZenerDiodeforStabilizedPowerSupply

Features ?Smalloutlineyethigh-powerpermitting500mWpowerdissipation. ?Halogenfree,EnvironmentalfriendlyPackageincludesConformitytoRoHSDirective. ?ThinUltrasmallResinPackage(TURP-FM)issuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RKZ8.2BKP

SiliconPlanarZenerDiodeforSurgeAbsorption

Features ?HighESD-Capability30kV,humanbodymodel(IEC61000-4-2). ?Widezenervoltagerangefrom6.2Vthrough8.2V. ?Halogenfree,EnvironmentalfriendlyPackageincludeConformitytoRoHSDirective. ?UltrasmallPackage(0.6mm×0.3mmSizeleadlesstype).

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    PZU8.2BL

  • 功能描述：

    穩(wěn)壓二極管 40W SNGL 200mA 8.64V Single Zener diodes

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 齊納電壓：

    12 V

  • 電壓容差：

    5 %

  • 電壓溫度系數(shù)：

    0.075 %/K

  • 功率耗散：

    3 W

  • 最大反向漏泄電流：

    3 uA

  • 最大齊納阻抗：

    7 Ohms

  • 最大工作溫度：

    + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    DO-214AC

  • 封裝：

    Reel

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SOD882
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全新原裝現(xiàn)貨庫存
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2023+
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SOD-882
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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NEXPERIA/安世
SOD882
23+
400000
授權(quán)代理/原廠FAE技術(shù)支持
 詢價
NEXPERIA/安世
24+
原廠原封可拆樣
65258
百分百原裝現(xiàn)貨,實(shí)單必成
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TI/德州儀器
23+
MSOP8
69820
終端可以免費(fèi)供樣,支持BOM配單!
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更多PZU8.2BL供應(yīng)商 更新時間2025-6-29 16:20:00

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