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PHB14NQ20T

TrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHB14NQ20T

TrenchMOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHB14NQ20T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD14NQ20T

TrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD14NQ20T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHF14NQ20T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticfullpackenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHX14NQ20Tissupplie

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP14NQ20T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHP14NQ20T

TrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP14NQ20T

TrenchMOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHX14NQ20T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=230mΩ(Max)@VGS=10V DESCRIPTION ·DCtoDCconverters ·Generalpurposeswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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