首頁(yè) >RN2118(T5LFT)>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
318.0MHzSAWResonator | rfm RF Monolithics, Inc | rfm | ||
850MHz1WattPowerAmplifierwithActiveBias ProductDescription SirenzaMicrodevices’SPA-2118isahighefficiencyGaAs HeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableand | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
850MHz1WattPowerAmplifierwithActiveBias | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
850MHz1WATTPOWERAMPLIFIERWITHACTIVEBIAS | RFMDRF Micro Devices 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | RFMD | ||
850MHz1WATTPOWERAMPLIFIERWITHACTIVEBIAS | RFMDRF Micro Devices 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | RFMD | ||
850MHz1WATTPOWERAMPLIFIERWITHACTIVEBIAS | RFMDRF Micro Devices 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | RFMD | ||
TrimlessVoltageControlledAmplifiers GENERALDESCRIPTION TheSSM2018TandSSM2118TrepresentcontinuingevolutionoftheFreyOperationalVoltageControlledElement(OVCE)topologythatpermitsflexibilityinthedesignofhighperformancevolumecontrolsystems.Voltage(SSM2018T)anddifferentialcurrent(SSM2118T)outputversio | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
TrimlessVoltageControlledAmplifiers GENERALDESCRIPTION TheSSM2018TandSSM2118TrepresentcontinuingevolutionoftheFreyOperationalVoltageControlledElement(OVCE)topologythatpermitsflexibilityinthedesignofhighperformancevolumecontrolsystems.Voltage(SSM2018T)anddifferentialcurrent(SSM2118T)outputversio | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
TrimlessVoltageControlledAmplifiers | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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