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SD103CWS-V

SmallSignalSchottkyDiodes

Features ?TheSD103seriesisametal-on-siliconSchottkybarrierdevicewhichisprotectedbyaPNjunctionguardring ?ThisdiodeisalsoavailableintheMini-MELFcasewiththetypedesignationsLL103AtoLL103C,DO35casewiththetypedesignationsSD103AtoSD103CandSOD123casewithty

VishayVishay Siliconix

威世科技威世科技半導體

SD103CWS-V

2.0ASurfaceMountSchottkyBarrierDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

SD103CWS-V-G

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技威世科技半導體

SD103CW-TP

400mWSmallSignalSchottkyDiode20to40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffix designatesRoHSCompliant.Seeorderinginformation) ?GuardRingProtection ?LowForwardVoltageDrop ?LowPowerLossForHighEfficiency ?DeviceMarkingCode:SD103AW:S4

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

SD103CW-V

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技威世科技半導體

SD103CW-V

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技威世科技半導體

SD103CX

SchottkyBarrierDiode

FEATURES ?LowForwardVoltageDrop. ?GuardRingConstructionForTransientProtection. ?NegligibleReverseRecoveryTime. ?LowReverseCapacitance. APPLICATIONS ?Schottybarrierswitching.

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

SD103N

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

SD103R

DISCRETEPOWERDIODESandTHYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

SD103XWS

SurfaceMountSchottkyBarrierDiodes

Features ?LowForwardVoltage

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

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