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| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features 1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) 2)1.5-Vgatedrivevoltage. 3)Lowdrain-sourceon-resistance RDS(ON)=63.2mΩ(max)(@VGS=-1.5V) RDS(ON)=41.1mΩ(max)(@VGS=-1.8V) RDS(ON)=31.0mΩ(max)(@VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOS?? | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features 1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) 2)1.5-Vgatedrivevoltage. 3)Lowdrain-sourceon-resistance RDS(ON)=63.2mΩ(max)(@VGS=-1.5V) RDS(ON)=41.1mΩ(max)(@VGS=-1.8V) RDS(ON)=31.0mΩ(max)(@VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features 1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) 2)1.5-Vgatedrivevoltage. 3)Lowdrain-sourceon-resistance RDS(ON)=63.2mΩ(max)(@VGS=-1.5V) RDS(ON)=41.1mΩ(max)(@VGS=-1.8V) RDS(ON)=31.0mΩ(max)(@VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features 1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) 2)1.5-Vgatedrivevoltage. 3)Lowdrain-sourceon-resistance RDS(ON)=63.2mΩ(max)(@VGS=-1.5V) RDS(ON)=41.1mΩ(max)(@VGS=-1.8V) RDS(ON)=31.0mΩ(max)(@VGS | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
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