首頁(yè) >SSM3J351R,LCKF(T>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOS?? | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
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