STD83003

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.TheSTD83003isexp

STD830CP20

Marking：D830CP20；Package：DIP-8；Complementary transistor pair in a single package

Features ■LowVCE(sat) ■Simplifiedcircuitdesign ■Reducedcomponentcount ■Lowspreadofdynamicparameters Applications ■Compactfluorescentlamp(CFL)110Vmains Description TheSTD830CP20isahybridcomplementarypair ofpowerbipolartransistorsmanufacturedby usingthe

STD830CP40

Complementary transistor pair in a single package

Description TheSTD830CP40isahybridcomplementarypairofpowerbipolartransistorsmanufacturedbyusingthehighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. TheSTD830CP40ishousedindualislandDIP-8packagewithseparatedterminals

STD85N3LH5

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description Thisproductutilizesthe5thgenerationofdesignrulesofST’sproprietarySTripFETTMtechnology.ThelowestavailableRDS(on)*Qg,inthestandardpackages,makesthisdevicesuitableforthemostdemandingDC-DCconverterapplications,wherehighpowerdensityistobeachieved. F

STD85N3LH5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD860

SCHOTTKY RECTIFIER

Features ?150'CTJoperation ?Centertapconfiguration ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?

STD878

High current, high performance, low voltage NPN transistors

Description ThedevicesaremanufacturedinlowvoltageNPNplanartechnologywith“baseisland”layout.theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■DCcurrentgain,hFE

STD878T4

Marking：D878；Package：DPAK；High current, high performance, low voltage NPN transistors

Description ThedevicesaremanufacturedinlowvoltageNPNplanartechnologywith“baseisland”layout.theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■DCcurrentgain,hFE

STD882

NPN Silicon Transistor

Description ?Suitableforlowvoltagelargecurrentdrivers ?ExcellenthFELinearity ?ComplementarypairwithSTB772 ?SwitchingApplication Features ?LowcollectorsaturationvoltageVCE(sat)=0.4V(Max.)

STD882D

NPN Silicon Transistor

Description ?Suitableforlowvoltagelargecurrentdrivers ?ExcellenthFELinearity ?ComplementarypairwithSTB772D ?SwitchingApplication Features ?LowcollectorsaturationvoltageVCE(sat)=0.4V(Max.)