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STF11NM60ND中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STF11NM60ND
廠商型號(hào)

STF11NM60ND

功能描述

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件大小

530.46 Kbytes

頁面數(shù)量

18

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-7-22 20:00:00

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STF11NM60ND規(guī)格書詳情

Description

The device is an N-channel FDmesh? II Power MOSFET that belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Features

■ The worldwide best RDS(on)* area amongst the

fast recovery diode devices

■ 100 avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

Application

Switching applications

產(chǎn)品屬性

  • 型號(hào):

    STF11NM60ND

  • 功能描述:

    MOSFET N-Ch, 600V-0.37ohms FDMesh 10A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST/意法
22+
TO-220F
100000
代理渠道/只做原裝/可含稅
詢價(jià)
ST/意法
23+
NA
25630
原裝正品
詢價(jià)
ST/意法
11+
TO-220F
12
詢價(jià)
STM
23+
TO-220FP-3
50000
原裝正品 支持實(shí)單
詢價(jià)
ST/意法
21+
NA
9450
只做原裝,假一罰十
詢價(jià)
ST
22+
NA
1000
原裝正品支持實(shí)單
詢價(jià)
ST
23+
TO220F
6996
只做原裝正品現(xiàn)貨
詢價(jià)
ST/意法半導(dǎo)體
21+
TO-220-3
8860
原裝現(xiàn)貨,實(shí)單價(jià)優(yōu)
詢價(jià)
ST/意法半導(dǎo)體
24+
TO-220-3
16900
原裝,正品
詢價(jià)
ST/意法半導(dǎo)體
23+
TO-220-3
12700
買原裝認(rèn)準(zhǔn)中賽美
詢價(jià)