首頁(yè) >TC74ACT08F(EL,F)>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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CMOSDigitalIntegratedCircuitSiliconMonolithicQuad2-InputANDGate | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC Quad2-InputANDGate TheTC74ACT08isanadvancedhighspeedCMOS2-INPUTANDGATEfabricatedwithsilicongateanddouble-layermetalwiringC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. This | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
CMOSDigitalIntegratedCircuitSiliconMonolithicQuad2-InputANDGate | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC Quad2-InputANDGate TheTC74ACT08isanadvancedhighspeedCMOS2-INPUTANDGATEfabricatedwithsilicongateanddouble-layermetalwiringC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. This | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC Quad2-InputANDGate TheTC74ACT08isanadvancedhighspeedCMOS2-INPUTANDGATEfabricatedwithsilicongateanddouble-layermetalwiringC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. This | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
CMOSDigitalIntegratedCircuitSiliconMonolithicQuad2-InputANDGate | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
QUAD2-INPUTANDGATE ■DESCRIPTION TheU74ACT08consistsoffour2-INPUTANDGATE,itprovidesthefunctionY=A*B,thedeviceisdesignedtointerfacedirectlyHighSpeedCMOSsystemswithTTL,NMOSandCMOSoutputvoltagelevels. ■FEATURES *OperationVoltageRange:4.5~5.5V *LowPowerDissipation:IC | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
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