首頁 >TCS1307_C>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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High-performancebitstreamdigitalfilter FEATURES ?Multipleformatinputs:I2S,Sony16,18and20-bit ?8-sampleinterpolationerrorconcealment ?Digitalmute,attenuation?12dB ?Digitalaudiooutputfunction(biphase-markencoded)accordingtoIEC958 ?Digitalsilencedetection(output) ?Digitalde-emphasis(sele | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
KaBandLowNoiseAmplifier KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?23-29GHzFrequencyRange ?3.1dBNominalNoiseFigure28GHz ?17dBNominalGain ?OTOI>22dBm ?5V,50mASelf-Bias PrimaryApplications ?Point-to-PointRadio ?Point-to-MultipointCommunications | TriQuint TriQuint Semiconductor | TriQuint | ||
KaBandLowNoiseAmplifier KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?23-29GHzFrequencyRange ?3.1dBNominalNoiseFigure28GHz ?17dBNominalGain ?OTOI>22dBm ?5V,50mASelf-Bias PrimaryApplications ?Point-to-PointRadio ?Point-to-MultipointCommunications | TriQuint TriQuint Semiconductor | TriQuint | ||
HC49USDIP17.664MHzCrystalUnit Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
N-Channel30-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30V(D-S)MOSFET FEATURES ?TrenchFET??PowerMOSFET ?100%RgTested ?100%UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?NotebookSystemPower ?LowCurrentDC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
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