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DTC144TE

Marking：TL；Package：EMT3；Digital transistors (built in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternal inputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallownegativebiasingof theinput.Theyalsohaveth

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

P4SMAJ7.0C

Marking：TL；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 400WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

PZU14DB2

Marking：TL；Package：SOT353；Dual Zener diodes

1.1Generaldescription Dualisolatedgeneral-purposeZenerdiodesinSOT353(SC-88A)verysmall Surface-MountedDevice(SMD)standardplasticanddark-greenplasticpackages. 1.2Features 1.3Applications nGeneralregulationfunctions nNon-repetitivepeakreversepower dissipation:PZSM

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

R6012ANJ

Marking：TL；Package：LPTS；10V Drive Nch MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy Applications Switching Structure SiliconN-channelMOSFET

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R6015ANJ

Marking：TL；Package：LPTS；10V Drive Nch MOSFET

Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Switching

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R6018ANJ

Marking：TL；Package：LPTS；10V Drive Nch MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

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RK3055E

Marking：TL；Package：CPT3；Small switching (60V, 8A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive. 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel. Structure SiliconN-channelMOSFET

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RRR030P03

Marking：TL；Package：TSMT3；4V Drive Pch MOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

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RSD140P06

Marking：TL；Package：SOT-428；4V Drive Pch MOSFET

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. ●Application Switching ●Structure SiliconP-channelMOSFET

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RTR025N03

Marking：TL；Package：TSMT3；2.5V Drive Nch MOS FET

Features 1)LowOn-resistance. 2)Spacesaving?smallsurfacemountpackage(TSMT3). 3)Lowvoltagedrive(2.5Vdrive). Applications Switching

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詳細(xì)參數(shù)

  • 型號：

    TL

  • 制造商：

    LINDSTROM

  • 功能描述：

    TWEEZERS FLAT EDGE STRONG TIPS

  • 功能描述：

    TWEEZERS, FLAT EDGE STRONG TIPS

  • 功能描述：

    TWEEZERS, FLAT EDGE STRONG TIPS; Tweezer

  • Type：

    Flat; Overall

  • Length：

    120mm; Tweezer Body

  • Material：

    Stainless Steel; Tweezer Tip

  • Material：

    Stainless Steel;

  • SVHC：

    No SVHC(19-Dec-2012) ;RoHS

  • Compliant：

    NA

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更多TL供應(yīng)商 更新時間2025-7-5 15:01:00

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