首頁 >TLP2703(E(T>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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POWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2703GRisN-ChannelMOSFieldEffectTransistor designedforDC/DCconvertersandpowermanagement applicationsofnotebookcomputers. FEATURES ?Lowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=9.0A) RDS(on)2=6.4mΩMAX.(VGS=4.5V,ID=9.0A) ?Lo | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel70V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?High-SideSwitching ?LowOn-Resistance:3? ?LowThreshold:-2V(typ.) ?FastSwtichingSpeed:20ns(typ.) ?LowInputCapacitance:20pF(typ.) ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
P-Channel70V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
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Thyristors(SiBODBreakoverDevices) [CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
Thyristors(SiBODBreakoverDevices) [CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 |
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