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TM541M-L

TO-2205ATriac

SankenSanken electric

三墾三墾電氣株式會社

TM541S-L

TO-220F5ATriac

■Features ●Repetitivepeakoff-statevoltage:VDRM=400,600V ●RMSon-statecurrent:IT(RMS)=5A ●Gatetriggercurrent:IGT=20mAmax(MODE,,) ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS) ●ULapprovedtypeavailable

SankenSanken electric

三墾三墾電氣株式會社

TM541S-R

TO-220F5ATriac

3-2Triacs Thyristors

SankenSanken electric

三墾三墾電氣株式會社

TPMC541

32/16Single-Endedor16/8DifferentialA/DChannels

TheTPMC541isastandardsingle-wide32bit33MHzPCI MezzanineCard(PMC)providing ?upto32/16single-endedor16/8differential16bit bipolaranaloginputchannels, ?8/4single-endedsimultaneousupdate16bit unipolar/bipolaranalogoutputchannelsand ?8tristatecapable5V-toleran

TEWS

TEWS Technologies GmbH

TPMC541-DOC

32/16Single-Endedor16/8DifferentialA/DChannels

TheTPMC541isastandardsingle-wide32bit33MHzPCI MezzanineCard(PMC)providing ?upto32/16single-endedor16/8differential16bit bipolaranaloginputchannels, ?8/4single-endedsimultaneousupdate16bit unipolar/bipolaranalogoutputchannelsand ?8tristatecapable5V-toleran

TEWS

TEWS Technologies GmbH

VDD541LCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

VDD541LNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

VDD541MCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

VDD541MNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

VDD541SCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

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