首頁 >UN2110-Q(TW)>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconPNPepitaxialplanartype SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz | CEL California Eastern Labs | CEL | ||
LINEARINTEGRATEDCIRCUIT | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
Finger-shapedheatsinkTO-126 | ASSMANN ASSMANN WSW COMPONENTS | ASSMANN | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip |
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