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UPA2721GR-E1

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2721GRisN-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=4.3mΩMAX.(VGS=10V,ID=10A) RDS(on)2=6.3mΩMAX.(VGS=4.5V,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2721GR-E1-A

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2721GRisN-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=4.3mΩMAX.(VGS=10V,ID=10A) RDS(on)2=6.3mΩMAX.(VGS=4.5V,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2721GR-E1

GENERALPURPOSEL-BANDDOWNCONVERTERICs

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

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