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VDD181LCTA

Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector with Delay circuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD181LCTA

Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit; ? Detection voltage range ·························· 1.8V~6.0V (selectable with a step of 0.1V)\n? Operating voltage range ·························· 0.7V~6.0V\n? High accuracy detection voltage ··················· ±1% (VDET=1.8V~6.0V)\n? Detection voltage temperature characteristics ···· Typ. ±20ppm/°C (VDET=1.8V~6.0V)\n? Delay time ······································· S/10~50ms, M/50~200ms, L/80~400ms\n? Output types ····································· CMOS or N-channel open drain\n? Low current consumption ·························· Typ. 0.6μA (VIN=1.5V)\n? Operating temperature range ······················ –40°C ~ +85°C\n? Small package ···································· SOT-23 (2.9×2.8×1.1mm);

GENERAL DESCRIPTIONS\nThe VDD series are delay circuit built-in voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in high accuracy by using the laser trimming technology. Because the delay circuit is built-in, delay time can be set without any external components.FEATURES\n? Detection voltage range ·························· 1.8V~6.0V (selectable with a step of 0.1V)\n? Operating voltage range ·························· 0.7V~6.0V\n? High accuracy detection voltage ··················· ±1% (VDET=1.8V~6.0V)\n? Detection voltage temperature characteristics ···· Typ. ±20ppm/°C (VDET=1.8V~6.0V)\n? Delay time ······································· S/10~50ms, M/50~200ms, L/80~400ms\n? Output types ····································· CMOS or N-channel open drain\n? Low current consumption ·························· Typ. 0.6μA (VIN=1.5V)\n? Operating temperature range ······················ –40°C ~ +85°C\n? Small package ···································· SOT-23 (2.9×2.8×1.1mm)APPLICATIONS\n? Reset of microprocessor\n? Power-on reset of system\n? Charge detection of battery\n? Battery back-up of memory\n? Monitoring of battery life time\n? Delay circuit

AnaSemAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD181LCTA

CMOS

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VDD181LNNA

CMOS

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VDD181LNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD181LNTA

CMOS

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VDD181MCNA

CMOS

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VDD181MCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD181MCTA

CMOS

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etc未分類制造商etc2未分類制造商

VDD181MNNA

CMOS

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詳細(xì)參數(shù)

  • 型號(hào):

    VDD181LCTA

  • 功能描述:

    CMOS

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ANASEM
23+
NA
36000
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SSOT-24
23+
NA
15659
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ANASEM
25+23+
SSOT24
31927
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ANASEM
23+
SSOT24
50000
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ANASEM
24+
NA/
39250
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AnaSem(安納森)
2447
SOT-23
105000
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AnaSem(安納森)
2021+
SOT-23
3479
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ANASEM
23+
11200
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ANASEM安納森
23+
SOT-23
22820
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24+
N/A
64000
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更多VDD181LCTA供應(yīng)商 更新時(shí)間2025-7-28 13:22:00