W25Q80DV集成電路(IC)的存儲器規(guī)格書PDF中文資料

廠商型號 |
W25Q80DV |
參數(shù)屬性 | W25Q80DV 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為管件;類別為集成電路(IC)的存儲器;產(chǎn)品描述:C FLASH |
功能描述 | 2.5V AND 3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
封裝外殼 | 8-SOIC(0.154",3.90mm 寬) |
文件大小 |
2.21052 Mbytes |
頁面數(shù)量 |
73 頁 |
生產(chǎn)廠商 | Winbond |
企業(yè)簡稱 |
WINBOND【華邦電子】 |
中文名稱 | 華邦電子股份有限公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-5-8 9:59:00 |
人工找貨 | W25Q80DV價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
W25Q80DV規(guī)格書詳情
1. GENERAL DESCRIPTION
The W25Q80DV/DL (8M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial
Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad
SPI (XIP) and storing voice, text and data. The W25Q80DV operates on a single 2.7V to 3.6V and the
W25Q80DL operateds on a single 2.3V to 3.6V power supply with current consumption as low as 1μA
for power-down.
The W25Q80DV/DL array is organized into 4,096 programmable pages of 256-bytes each. Up to 256
bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups
of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The
W25Q80DV/DL has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors
allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q80DV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O
when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories. A Hold pin, Write Protect pin and programmable
write protection, with top, bottom or complement array control, provide further control flexibility.
Additionally, the device supports JEDEC standard manufacturer and device identification with a 64-bit
Unique Serial Number.
2. FEATURES
? Family of SpiFlash Memories
– W25Q80DV/DL: 8M-bit/1M-byte (1,048,576)
– 256-byte per programmable page
– Standard SPI: CLK,/CS,DI,DO,/WP,/Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Uniform 4KB Sectors, 32KB & 64KB Blocks
? Highest Performance Serial Flash
– W25Q80DV
104MHz Dual/Quad SPI clocks
208/416MHz equivalent Dual/Quad SPI
50MB/S continuous data transfer rate
– W25Q80DL
80MHz Dual/Quad SPI clocks
160/320MHz equivalent Dual/Quad SPI
40MB/S continuous data transfer rate
? Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
? Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64-kbytes)
– Erase/Program Suspend & Resume
– More than 100,000 erase/write cycles
– More than 20-year data retention
? Low Power, Wide Temperature Range
– W25Q80DV: Single 2.7 to 3.6V supply
– W25Q80DL: Single 2.3 to 3.6V supply
– <1μA Power-down(typ.)
? Advanced Security & Identification Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Power Supply Lock-Down and OTP protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
? Space Efficient Packaging(1)
:
– 8-pin SOIC 150-mil/208mil, VSOP 150-mil
– 8-pad WSON 6x5-mm, USON 2x3-mm
– 8-pin PDIP 300-mil
– 8-ball WLCSP
– Contact Winbond for KGD and other options
Note 1. Some package types are special orders,
please contact Winbond for ordering
information.
產(chǎn)品屬性
- 產(chǎn)品編號:
W25Q80DVSNBG
- 制造商:
Winbond Electronics
- 類別:
集成電路(IC) > 存儲器
- 系列:
SpiFlash?
- 包裝:
管件
- 存儲器類型:
非易失
- 存儲器格式:
閃存
- 技術(shù):
FLASH - NOR
- 存儲容量:
8Mb(1M x 8)
- 存儲器接口:
SPI - 四 I/O
- 寫周期時間 - 字,頁:
30μs,3ms
- 電壓 - 供電:
2.7V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
8-SOIC(0.154",3.90mm 寬)
- 供應(yīng)商器件封裝:
8-SOIC
- 描述:
C FLASH
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