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PDTC114ET

Marking:-16;Package:SOT-23;NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC114ET

Marking:-16;Package:SOT-23;NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPNresistor-equippedtransistor FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC114ET

Marking:-16;Package:SOT-23;Low VCEsat (BISS) transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC114ET

Marking:-16;Package:SOT-23;NPN resistor-equipped transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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