| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：016N；Package：20Ld3x4QFN；6A Low Quiescent Current High Efficiency Synchronous Buck Regulator 6ALowQuiescentCurrentHighEfficiencySynchronousBuckRegulator TheISL8016isahighefficiency,monolithic,synchronousstep-downDC/DCconverterthatcandeliverupto6Acontinuousoutputcurrentfroma2.7Vto5.5Vinputsupply.Theoutputvoltageisadjustablefrom0.6VtoVIN.Withan | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Marking：016N10TH；Package：TOLL；MOSFET Features -Ultra-lowon-resistanceandgate-charge. -AEC-Q101Qualified. -Advancedshielded-gatetechnology. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
Marking：016N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?Avala | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N06SC；Package：PG-WSON-8-2；OptiMOSTM Power-MOSFET, 60 V Features ?Doublesidecooledpackage-withlowestJuntion-topthermalresistance ?175°Crated ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?High | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N06NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor Features ?Optimizedforawiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：016N06C；Package：LFPAK4；MOSFET - Power, Single N-Channel 60 V, 16 m, 33 A Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
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