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IPT017N12NM6

Marking：017N12N6；Package：PG-HSOF-8；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitching ?Pb-freeleadplating;RoHSco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTC017N12NM6

Marking：017N12N6；Package：PG-HDSOP-16；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?OptimizedforhighfrequencyswitchingandTopsidecooling ?Pb-free

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTG017N12NM6

Marking：017N12N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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