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IPI024N06N3G

Marking:024N06N;Package:PG-TO262-3;OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP024N06N3G

Marking:024N06N;Package:PG-TO220-3;OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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