零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
Marking:040N;Package:WDFNW6;MOSFET - Power, Dual N-Channel 60 V, 38 m, 18 A Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Marking:040N014;Package:PDFN56;Single N-channel Trench MOSFET 40V 1.4mΩ 194A FEATURES ?TrenchpowerMOSFETtechnology ?N-channel,normallevel ?Enhancedavalancheruggedness ?100%Avalanchetested ?Maximum175°Cjunctiontemperature ?AEC-Q101qualified APPLICATIONS ?DC/DCandAC/DCconverters ?BrushedandBLDCmotordrivesystems | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
Marking:040N043;Package:PDFN56;Single N-channel Trench MOSFET 40V 4.3mΩ 88A FEATURES ?TrenchpowerMOSFETtechnology ?N-channel,normallevel ?Enhancedavalancheruggedness ?100%Avalanchetested ?Maximum175°Cjunctiontemperature ?AEC-Q101qualified APPLICATIONS ?Switchingapplications ?BrushedandBLDCMotordrivesystems | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
Marking:040N070;Package:PDFN56-DUAL;Single N-channel Trench MOSFET 40V 7.0mΩ 35A FEATURES ?TrenchpowerMOSFETtechnology ?N-channel,normallevel ?100%Avalanchetested ?Maximum175°Cjunctiontemperature ?AEC-Q101qualified APPLICATIONS ?Motorinverter ?Switchingapplications | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
Marking:040N036L;Package:PDFN33;Automotive MOSFET 40V 3.6mΩ 80A FEATURES ?TrenchpowerMOSFETtechnology ?SingleN-channeltrench,Logiclevel ?Enhancedavalancheruggedness ?100%Avalanchetested ?Maximum175°Cjunctiontemperature ?AEC-Q101qualifiedandPPAPcapable APPLICATIONS ?Switchingapplications ?Motordrivesystems | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
Marking:040N08NS;Package:PG-TDSON-8;Superior thermal resistance Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:040N06N;Package:PG-TO220-FP;Superior thermal resistance Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:040N08NS;Package:PG-TO263-3;StrongIRFETTM 2 Power-Transistor Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:040N03F2;Package:PG-TO252-3;MOSFET StrongIRFET? 2 Power?Transistor, 30 V Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:040N08NS;Package:PG-TO252-3;StrongIRFETTM 2 Power-Transistor Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|