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IPF067N20NM6

Marking：067N20N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPT067N20NM6

Marking：067N20N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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