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NVLJWS070N06CLTAG

Marking：070N；Package：WDFN6；MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BSC070N10NS3G

Marking：070N10NS；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor

Features ?Verylowgatechargeforhighfrequencyapplications ?Optimizedfordc-dcconversion ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Qualifiedac

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC070N10NS5

Marking：070N10N5；Package：PG-TDSON-8；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TF070N04M

Marking：070N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF070N04MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

BSC070N10LS5

Marking：070N10L5；Package：PG-TDSON-8；OptiMOSTM5 Power-Transistor, 100 V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC070N10NS5SC

Marking：070N10SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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