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IPI072N10N3G

Marking：072N10N；Package：PG-TO220-3；OptiMOS3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP072N10N3G

Marking：072N10N；Package：TO-220；100V N-Channel MOSFET

Features *N-channel,normallevel *Verylowon-resistanceRps(on) *175°Coperatingtemperature *Pb-freeleadplating;RoHScompliant *Idealforhigh-frequencyswitchingandsynchronousrectification *ps=100V *Ip(atVgs=10V)=80A *Rps(on)(atVes=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IPP072N10N3G

Marking：072N10N；Package：PG-TO262-3；OptiMOS3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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