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SVT085R5NL5TR

Marking:085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance.

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVT085R5NL5TR

Marking:085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance.

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVT085R5NL5TR

Marking:085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance.

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVT085R5NL5TR

Marking:085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance.

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

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