| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Marking：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET DESCRIPTION TheSVT085R5NT/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN |
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