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PHPT61006PY

Marking：1006PAB；Package：SOT669；100 V, 6 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. NPNcomplement:PHPT61006NY 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrinted

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHPT61006PY-Q

Marking：1006PAB；Package：SOT669；100 V, 6 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT61006NY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

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