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Marking：100N120AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package Features ?AEC-Q101qualified ?Highspeedswitchingperformance ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Tractioninverters ?DC-DCconverters ?Solarinverters ?OBC Description ThissiliconcarbidePowerMOSFETdevicehasbeendevelopedusingS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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