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STH110N7F6-2

Marking:110N7F6;Package:H2PAK-2;N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET? F6 Power MOSFET in a H2PAK-2 package

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Th

STMICROELECTRONICSSTMicroelectronics

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STP110N7F6

Marking:110N7F6;Package:TO-220;N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET? F6 Power MOSFET in a TO-220 package

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Th

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

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