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STL11N60M2-EP

Marking:11N60M2E;Package:PowerFLAT;N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh? M2 EP Power MOSFET in a PowerFLAT? 5x6 HV package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh? M2enhan

STMICROELECTRONICSSTMicroelectronics

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STFI11N60M2-EP

Marking:11N60M2EP;Package:TO-281;N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh? M2 EP Power MOSFET in an I2PAKFP package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh? M2enhan

STMICROELECTRONICSSTMicroelectronics

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