| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：12M1H007；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features ?VDSS=1200VatTvj=25°C ?IDCC=225AatTvj=25°C ?RDS(on)=7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecanbeapplied ?Robustbodydiodefor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：12M1H007；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Features ?VDSS=1200VatTvj=25°C ?IDCC=225AatTvj=25°C ?RDS(on)=7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecanbeapplied ?Robustbodydiodefor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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