| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：12M2H026；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features ?VDSS=1200VatTvj=25°C ?IDDC=53AatTC=100°C ?RDS(on)=25.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：12M2H026；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features ?VDSS=1200VatTvj=25°C ?IDDC=58AatTC=100°C ?RDS(on)=25.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：12M2H026；Package：PG-HDSOP-16-U03；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology Features ?VDSS=1200VatTvj=25°C ?IDDC=59AatTC=100°C ?RDS(on)=26mΩatVGS=18V,Tvj=25°C ?Internallayoutoptimizedforfastswitching ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvo | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：12M2H026；Package：PG-TO247-4-U07；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features ?VDSS=1200VatTvj=25°C ?IDDC=49AatTC=100°C ?RDS(on)=25mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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